Effect of dislocation scattering on electron mobility in GaN
نویسندگان
چکیده
This paper presents the calculation of electron mobility of GaN at various temperatures using Relaxation Time Approximation (RTA) method. The effect of dislocation scattering on electron mobility in GaN is studied. We have discussed about the role of important scattering mechanisms in GaN. The electron mobility values thus obtained are compared with other available experimental and theoretical results.
منابع مشابه
Calculation of electron mobility and effect of dislocation scattering in GaN
The electron mobility of GaN has been obtained at various temperatures by the relaxation time approximation method. The effect of dislocation scattering has also been discussed and calculated alongwith other important scattering mechanisms in this material. The results agree with other available experimental and theoretical data.
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